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Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates

Published online by Cambridge University Press:  30 July 2021

Tim Ruggles ,
Julia Deitz ,
Andrew Allerman ,
C. Barry Carter  and
Joseph Michael
Tim Ruggles
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Julia Deitz
Affiliation:
Sandia National Laboratory, United States
Andrew Allerman
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
C. Barry Carter
Affiliation:
University of Connecticut, Connecticut, United States
Joseph Michael
Affiliation:
Sandia National Laboratory, United States

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 916 - 917
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Ruggles, T., Deitz, J., Allerman, A., Carter, C.B., Michael, J., 2021, Identification of star defects in gallium nitride with HREBSD and ECCI. Microscopy & Microanalysis, in pressGoogle Scholar
Raghothamachar, B., Liu, Y., Peng, H., Ailihuamaer, T., Dudley, M., Shahedipour-Sandvik, F.S., Jones, K.A., Armstrong, A., Allerman, A.A., Han, J., et al. , 2020. X-ray topography characterization of gallium nitride substrates for power device development. Journal of Crystal Growth , 125709.Google Scholar